Title :
Fully-integrated charge pumps without oxide breakdown limitation
Author :
Jingqi Liu ; Allasasmeh, Y. ; Gregori, Stefano
Author_Institution :
Sch. of Eng., Univ. of Guelph, Guelph, ON, Canada
Abstract :
This paper considers the design of fully-integrated charge pumps whose output voltage is not capped by the main device voltage limitations such as oxide breakdown. The proposed solutions, which do not need dedicated high-voltage fabrication processes, are compared to conventional circuits with same area occupation and are evaluated through simulations.
Keywords :
charge pump circuits; circuit simulation; fully-integrated charge pumps; Breakdown voltage; Capacitance; Capacitors; Charge pumps; MOS devices; Metals; Resistance;
Conference_Titel :
Electrical and Computer Engineering (CCECE), 2011 24th Canadian Conference on
Conference_Location :
Niagara Falls, ON
Print_ISBN :
978-1-4244-9788-1
Electronic_ISBN :
0840-7789
DOI :
10.1109/CCECE.2011.6030708
