• DocumentCode
    3458288
  • Title

    Fully-integrated charge pumps without oxide breakdown limitation

  • Author

    Jingqi Liu ; Allasasmeh, Y. ; Gregori, Stefano

  • Author_Institution
    Sch. of Eng., Univ. of Guelph, Guelph, ON, Canada
  • fYear
    2011
  • fDate
    8-11 May 2011
  • Abstract
    This paper considers the design of fully-integrated charge pumps whose output voltage is not capped by the main device voltage limitations such as oxide breakdown. The proposed solutions, which do not need dedicated high-voltage fabrication processes, are compared to conventional circuits with same area occupation and are evaluated through simulations.
  • Keywords
    charge pump circuits; circuit simulation; fully-integrated charge pumps; Breakdown voltage; Capacitance; Capacitors; Charge pumps; MOS devices; Metals; Resistance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electrical and Computer Engineering (CCECE), 2011 24th Canadian Conference on
  • Conference_Location
    Niagara Falls, ON
  • ISSN
    0840-7789
  • Print_ISBN
    978-1-4244-9788-1
  • Electronic_ISBN
    0840-7789
  • Type

    conf

  • DOI
    10.1109/CCECE.2011.6030708
  • Filename
    6030708
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3458288