DocumentCode
3458311
Title
High-efficiency regulated gate driver for power MOSFET
Author
Tzeng, Ren-Huei ; Hung, Chia-Chien ; Chen, Chern-Lin
Author_Institution
Grad. Inst. of Electron. Eng., Nat. Taiwan Univ., Taipei
fYear
2008
fDate
24-28 Feb. 2008
Firstpage
621
Lastpage
626
Abstract
Driving power MOSFET at high switching frequency may induce significant power loss. A gate driver with energy saving function is proposed to meet the weight and volume issues of power SOC integration and can adjust the output gate driving voltage for different applications. The proposed gate driver is completely designed on-chip and does not need extra off-chip components. The power dissipation of the proposed gate driver can be reduced by 64.2% at most from the experimental result.
Keywords
power MOSFET; output gate driving voltage; power MOSFET; power dissipation; power loss; Driver circuits; MOSFET circuits; Power MOSFET; Power conversion; Power engineering and energy; Power supplies; Pulse width modulation; Resonance; Switching frequency; Switching loss; gate driver; high frequency; power MOSFET;
fLanguage
English
Publisher
ieee
Conference_Titel
Applied Power Electronics Conference and Exposition, 2008. APEC 2008. Twenty-Third Annual IEEE
Conference_Location
Austin, TX
ISSN
1048-2334
Print_ISBN
978-1-4244-1873-2
Electronic_ISBN
1048-2334
Type
conf
DOI
10.1109/APEC.2008.4522785
Filename
4522785
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