Title :
High-efficiency regulated gate driver for power MOSFET
Author :
Tzeng, Ren-Huei ; Hung, Chia-Chien ; Chen, Chern-Lin
Author_Institution :
Grad. Inst. of Electron. Eng., Nat. Taiwan Univ., Taipei
Abstract :
Driving power MOSFET at high switching frequency may induce significant power loss. A gate driver with energy saving function is proposed to meet the weight and volume issues of power SOC integration and can adjust the output gate driving voltage for different applications. The proposed gate driver is completely designed on-chip and does not need extra off-chip components. The power dissipation of the proposed gate driver can be reduced by 64.2% at most from the experimental result.
Keywords :
power MOSFET; output gate driving voltage; power MOSFET; power dissipation; power loss; Driver circuits; MOSFET circuits; Power MOSFET; Power conversion; Power engineering and energy; Power supplies; Pulse width modulation; Resonance; Switching frequency; Switching loss; gate driver; high frequency; power MOSFET;
Conference_Titel :
Applied Power Electronics Conference and Exposition, 2008. APEC 2008. Twenty-Third Annual IEEE
Conference_Location :
Austin, TX
Print_ISBN :
978-1-4244-1873-2
Electronic_ISBN :
1048-2334
DOI :
10.1109/APEC.2008.4522785
