DocumentCode :
3458323
Title :
Voltage controlled SAW filters on 2DEG AlGaN/GaN heterostructures
Author :
Grajal, Jesús ; Calle, Fernando ; Pedrós, Jorge ; Palacios, Tomás
Author_Institution :
Departamento de Senales, Sistemas y Radiocomunicaciones, Univ. Politecnica de Madrid, Spain
Volume :
1
fYear :
2004
fDate :
6-11 June 2004
Firstpage :
387
Abstract :
SAW devices fabricated on AlGaN/GaN 2DEG heterostructures may be used as a voltage controlled filters regarding the insertion losses. The control is performed through external voltages applied to the interdigital transducers. These filters could be integrated into future MMIC circuits based on AlGaN/GaN high electron mobility transistors.
Keywords :
III-V semiconductors; aluminium compounds; surface acoustic wave devices; surface acoustic wave filters; transducers; voltage control; 2DEG AlGaN-GaN heterostructures; AlGaN-GaN; MMIC circuits; SAW devices; SAW filters; external voltages application; filter fabrication; filter integrated; high electron mobility transistor; insertion loss; interdigital transducers; tunable filters; voltage controlled filters; Aluminum gallium nitride; Circuits; Gallium nitride; HEMTs; Insertion loss; MMICs; SAW filters; Surface acoustic wave devices; Transducers; Voltage control;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest, 2004 IEEE MTT-S International
ISSN :
0149-645X
Print_ISBN :
0-7803-8331-1
Type :
conf
DOI :
10.1109/MWSYM.2004.1335903
Filename :
1335903
Link To Document :
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