Title :
Monolithic GaAs-based 1.3 /spl mu/m VCSEL directly-modulated at 10 Gb/s
Author :
Naone, R.L. ; Jackson, A.W. ; Feld, S.A. ; Galt, D. ; Malone, K.J. ; Hindi, J.J.
Author_Institution :
Cielo Commun. Inc., Broomfield, CO, USA
Abstract :
Summary form only given. VCSELs are inherently more cost-effective to manufacture and more efficient than edge emitting diode lasers, as proven by the dominance of 850 nm VCSELs in the very short reach data communications space. This paper introduces a high-speed VCSEL lasing at 1.3 /spl mu/m, enabling similar low-cost solutions for the much longer links in the telecommunications market.
Keywords :
III-V semiconductors; data communication equipment; gallium arsenide; optical modulation; optical transmitters; semiconductor lasers; surface emitting lasers; 1.3 micron; 850 nm; GaAs; VCSEL efficiency; VCSELs; cost-effective manufacture; directly-modulated VCSEL; edge emitting diode lasers; high-speed VCSEL; lasing wavelength; monolithic GaAs-based VCSEL; short reach data communications; telecommunications links; telecommunications market; Apertures; Distributed Bragg reflectors; Dry etching; Frequency estimation; Gallium arsenide; High speed optical techniques; Optical pumping; Quantum well lasers; Temperature distribution; Vertical cavity surface emitting lasers;
Conference_Titel :
Lasers and Electro-Optics, 2001. CLEO '01. Technical Digest. Summaries of papers presented at the Conference on
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
1-55752-662-1
DOI :
10.1109/CLEO.2001.948231
