Monolithic GaAs-based 1.3 /spl mu/m VCSEL directly-modulated at 10 Gb/s

Author

Naone, R.L. ; Jackson, A.W. ; Feld, S.A. ; Galt, D. ; Malone, K.J. ; Hindi, J.J.

Author_Institution

Cielo Commun. Inc., Broomfield, CO, USA

fYear

2001

fDate

11-11 May 2001

Abstract

Summary form only given. VCSELs are inherently more cost-effective to manufacture and more efficient than edge emitting diode lasers, as proven by the dominance of 850 nm VCSELs in the very short reach data communications space. This paper introduces a high-speed VCSEL lasing at 1.3 /spl mu/m, enabling similar low-cost solutions for the much longer links in the telecommunications market.

Keywords

III-V semiconductors; data communication equipment; gallium arsenide; optical modulation; optical transmitters; semiconductor lasers; surface emitting lasers; 1.3 micron; 850 nm; GaAs; VCSEL efficiency; VCSELs; cost-effective manufacture; directly-modulated VCSEL; edge emitting diode lasers; high-speed VCSEL; lasing wavelength; monolithic GaAs-based VCSEL; short reach data communications; telecommunications links; telecommunications market; Apertures; Distributed Bragg reflectors; Dry etching; Frequency estimation; Gallium arsenide; High speed optical techniques; Optical pumping; Quantum well lasers; Temperature distribution; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2001. CLEO '01. Technical Digest. Summaries of papers presented at the Conference on

Conference_Location

Baltimore, MD, USA

Print_ISBN

1-55752-662-1

Type

conf

DOI

10.1109/CLEO.2001.948231

Filename

948231