Title :
Low threshold (380 /spl mu/A) and single transverse mode operation of 1.55-/spl mu/m BH vertical-cavity surface-emitting lasers
Author :
Ohiso, Y. ; Okamoto, H. ; Iga, R. ; Kishi, K. ; Tateno, K. ; Amano, C.
Author_Institution :
NTT Photonics Labs., Atsugi, Japan
Abstract :
Summary form only given. We report high performance of 1.55-/spl mu/m. BH-VCSELs. A record threshold current as low as 380 /spl mu/A at 20/spl deg/C, single-mode operation up to the maximum output power, and an operating temperature as high as 60/spl deg/C are achieved.
Keywords :
III-V semiconductors; distributed Bragg reflector lasers; gallium arsenide; indium compounds; laser modes; quantum well lasers; surface emitting lasers; 1.55 micron; 20 C; 380 muA; 60 C; BH VCSEL; DBR; InP-InGaAsP; high performance; low threshold operation; near field patterns; optical output-current characteristics; quantum-wells; single transverse mode operation; thin-film wafer-fusion; Gallium arsenide; Indium phosphide; Optical surface waves; Power generation; Stimulated emission; Substrates; Surface emitting lasers; Threshold current; Transistors; Vertical cavity surface emitting lasers;
Conference_Titel :
Lasers and Electro-Optics, 2001. CLEO '01. Technical Digest. Summaries of papers presented at the Conference on
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
1-55752-662-1
DOI :
10.1109/CLEO.2001.948232
