2003 8th International Symposium on Plasma- and Process-Induced Damage. (Cat. No.03TH8669)

fYear

2003

fDate

24-25 April 2003

Abstract

The following topics are dealt with: process induced damage in CMOS; plasma etching processes; gate charging effect; plasma induced damage; scaling effects; ultrathin dielectrics; plasma-induced charging; reliability issues; ion implantation technology; electron shading damage; gate oxide quality; damage monitoring; IC interconnection designs; plasma equipment trends; and CMOS downscaling.

Keywords

CMOS integrated circuits; dielectric thin films; integrated circuit interconnections; integrated circuit technology; ion implantation; plasma materials processing; process monitoring; radiation effects; reliability; semiconductor technology; sputter etching; surface charging; CMOS downscaling; IC interconnection designs; damage monitoring; electron shading damage; gate charging effect; gate oxide quality; ion implantation technology; plasma equipment trends; plasma etching processes; plasma induced damage; plasma-induced charging; process induced damage; reliability issues; scaling effects; ultrathin dielectrics; CMOS integrated circuits; Dielectric films; Integrated circuit fabrication; Integrated circuit interconnections; Ion implantation; Radiation effects; Reliability; Semiconductor device fabrication; Sputter etching; Surface charging;

fLanguage

English

Publisher

ieee

Conference_Titel

Plasma- and Process-Induced Damage, 2003 8th International Symposium

Conference_Location

Corbeil-Essonnes, France

Print_ISBN

0-7803-7747-8

Type

conf

DOI

10.1109/PPID.2003.1199715

Filename

1199715