Title :
Infrared thermal imaging without pixellation
Author :
Dupont, E. ; Buchanan, M. ; Byloos, M. ; Gao, M. ; Song, C.-Y. ; Wasilewski, Z.R. ; Liu, H.C.
Author_Institution :
Inst. for Microstructural Sci., Nat. Res. Council of Canada, Ottawa, Ont., Canada
Abstract :
Summary form only given. A large pixel-less thermal imager based on the epitaxial integration of GaAs/AlGaAs quantum-well infrared photodetector and a GaAs light-emitting diode is demonstrated. The device transforms a mid-infrared (9 /spl mu/m) scene at to a near-infrared (0.82 /spl mu/m) image.
Keywords :
III-V semiconductors; aluminium compounds; focal planes; gallium arsenide; infrared detectors; light emitting diodes; photodetectors; quantum well devices; 0.82 micron; 9 micron; GaAs-AlGaAs; QWIP-LED device; epitaxial integration; fill factor; infrared thermal imaging; large pixelless thermal imager; light-emitting diode; mid-infrared scene; near-infrared image; quantum well stack; quantum-well infrared photodetector; Charge coupled devices; Dry etching; Gallium arsenide; Gratings; Infrared imaging; Layout; Light emitting diodes; Optical imaging; Pixel; Temperature;
Conference_Titel :
Lasers and Electro-Optics, 2001. CLEO '01. Technical Digest. Summaries of papers presented at the Conference on
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
1-55752-662-1
DOI :
10.1109/CLEO.2001.948247
