A new non-linear electrothermal 3D spline model with charge integration for power FETs

Author

Lagarde, C. ; Teyssier, J.P. ; Bouysse, P. ; Quere, R. ; Charbonniaud, C. ; Jardel, O. ; Bousbia, H.

Author_Institution

IRCOM, Univ. de Limoges, Brive, France

Volume

2

fYear

2005

fDate

4-6 Oct. 2005

Abstract

A new 3D table-based model for microwave field effect transistors is proposed. This non-linear electrothermal model depends on three variables: the gate-source voltage Vgs, the drain-source voltage Vds and the junction temperature T of the device. These three commands drive five non-linearities: the input current source Ig, the drain current source Id and the capacities Cds, Cgs and Cgd. This paper describes the extraction of the model and its implementation in a CAD software. Its extraction from pulsed I(V) and S parameter measurements is very fast and doesn´t require any optimization process. As an example, the modelling of a silicon carbide (SiC) power FET and simulation results are presented in order to show the capabilities of this model.

Keywords

CAD; microwave field effect transistors; power field effect transistors; silicon compounds; splines (mathematics); wide band gap semiconductors; 3D table-based model; CAD software; SiC; charge integration; drain current source; drain-source voltage; gate-source voltage; input current source; junction temperature; microwave field effect transistor; nonlinear electrothermal 3D spline model; power FET; power simulation; Electrothermal effects; FETs; Frequency measurement; Pulse measurements; Scattering parameters; Silicon carbide; Spline; Temperature dependence; Temperature sensors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2005 European

Print_ISBN

2-9600551-2-8

Type

conf

DOI

10.1109/EUMC.2005.1610134

Filename

1610134