Title :
Integrated circuit implementation for a GaN HFETs driver circuit
Author :
Wang, B. ; Riva, M. ; Bakos, J. ; Monti, A.
Author_Institution :
Dept. of E.E., Univ. of South Carolina, Columbia, SC
Abstract :
The paper presents the design of an integrated circuit (IC) for a 10MHz low power-loss driver for GaN HFETs. While the main elements of the topology were introduced in a previous work, here the authors focus on the design of the IC and present preliminary results and considerations. The driver circuit proposed, based upon new two-stage positive-to-negative level shifters and resonant topology, has been designed and implemented using the cost-effective Smart Voltage extension (SVX) technique. Detailed analysis of the design process as well as a full set of simulations, reported in the paper, fully demonstrate the possibility to exploit the advantages of GaN devices by means of a smart and convenient implementation.
Keywords :
III-V semiconductors; driver circuits; gallium compounds; high electron mobility transistors; integrated circuit design; wide band gap semiconductors; HFET; driver circuit; frequency 10 MHz; integrated circuit implementation; resonant topology; smart voltage extension technique; two-stage positive-to-negative level shifters; Analytical models; Circuit simulation; Circuit topology; Driver circuits; Gallium nitride; HEMTs; MODFETs; Process design; Resonance; Voltage;
Conference_Titel :
Applied Power Electronics Conference and Exposition, 2008. APEC 2008. Twenty-Third Annual IEEE
Conference_Location :
Austin, TX
Print_ISBN :
978-1-4244-1873-2
Electronic_ISBN :
1048-2334
DOI :
10.1109/APEC.2008.4522828