A Zinc Oxide modified Porous Silicon humidity sensor

Author

Jiang, Tao ; Zhou, Xiaofeng ; Zhang, Jian ; Shi, Yanling ; Luo, Tianxing

Author_Institution

Dept. of Electr. Eng., East China Normal Univ., Shanghai

fYear

2006

fDate

20-23 Aug. 2006

Firstpage

1158

Lastpage

1162

Abstract

In this paper, a relative humidity sensor based on zinc oxide modified porous silicon was discussed. The porous silicon was prepared by electrochemical etching process first. Then the sol-gel precursor of Zinc Oxide was applied to the PS substrates and annealed at 450 degC. By this technique, it is possible to obtain a uniform zinc oxide film on the porous silicon substrates. The electrical conductivities of the porous silicon and zinc oxide/porous silicon structures under different humidity levels were measured. It is indicated that the modification of the porous silicon by sol-gel zinc oxide increase the sensitivity and shorten the response time to the relative humidity

Keywords

II-VI semiconductors; annealing; electrical conductivity; electrochemistry; elemental semiconductors; etching; humidity sensors; semiconductor heterojunctions; silicon; sol-gel processing; wide band gap semiconductors; zinc compounds; 450 C; Si; ZnO-Si; annealing; electrical conductivity; electrochemical etching process; sol-gel precursor; zinc oxide film; zinc oxide modified porous silicon relative humidity sensor; Annealing; Conductivity measurement; Delay; Electric variables measurement; Etching; Humidity measurement; Semiconductor films; Silicon; Substrates; Zinc oxide; Zinc Oxide; humidity sensor; modified Porous Silicon; sol-gel;

fLanguage

English

Publisher

ieee

Conference_Titel

Information Acquisition, 2006 IEEE International Conference on

Conference_Location

Weihai

Print_ISBN

1-4244-0528-9

Electronic_ISBN

1-4244-0529-7

Type

conf

DOI

10.1109/ICIA.2006.305909

Filename

4097842