An analytical approach to determine MOSFET RF extraction uncertainties due to S parameter measurement errors

Author

Saijets, Jan ; Åberg, Markku

Author_Institution

VTT Inf. Technol., Finland

fYear

2003

fDate

4-5 Dec. 2003

Firstpage

99

Lastpage

107

Abstract

The effects of S parameter measurement errors resulting from vector network analyzer uncertainties on RF MOSFET parameter extraction are analyzed. The uncertainty effects on the MOSFET small signal equivalent circuit are studied. The lower uncertainty specifications of a high end network analyzer were used as the basis for the analysis. The results suggest that input resistance extraction is very inaccurate. Transconductance and feedback capacitance characterization can be extracted with less than 4% error at low frequencies below 2-3 GHz. Output capacitance is challenging because it can easily be 50% erroneous. Output resistance can be extracted with less than 20% error for an output real part range of 3 Ω to 1 kΩ.

Keywords

MOSFET; S-parameters; UHF field effect transistors; equivalent circuits; 2 to 3 GHz; 3 to 1000 ohm; MOSFET RF extraction uncertainty; MOSFET equivalent circuit; RF MOSFET parameter extraction; S parameter measurement errors; feedback capacitance; high end network analyzer; input resistance extraction; network analysis; output capacitance; transconductance; uncertainty effects; uncertainty specifications; vector network analyzer uncertainty; Capacitance; Equivalent circuits; Impedance; Information analysis; MOSFET circuits; Measurement errors; Measurement uncertainty; Parameter extraction; Radio frequency; Scattering parameters;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Measurements Conference, 2003. Fall 2003. 62nd ARFTG

Print_ISBN

0-7803-8195-5

Type

conf

DOI

10.1109/ARFTGF.2003.1459760

Filename

1459760