High power density, low stray inductance, double sided cooled matrix-converter type switch

This paper presents an advanced integration approach for vertical power semiconductor devices. Based on recently demonstrated surface bump technology, it advances previous work by implementing a flip-chip stacking concept, which results in an improved solution for space exploitation, device performance optimization and assembly process simplification. As a case study, the design of a high-voltage bidirectional switch is considered, for which a prototypal assembly is developed and preliminary functional tests are carried out.