DocumentCode :
3459952
Title :
CPW line-to-line coupling on glass and low resistivity silicon
Author :
Lakshminarayanan, Balaji ; Weller, T.
Author_Institution :
Dept. of Electr. Eng., South Florida Univ., Tampa, FL, USA
fYear :
2003
fDate :
4-5 Dec. 2003
Firstpage :
239
Lastpage :
242
Abstract :
This paper presents experimental results for line-to-line coupling between adjacent coplanar waveguide (CPW) transmission lines. The CPW lines are fabricated on glass and low resistivity CMOS grade Si substrates coated with a 20μm cyclotene polymer. From the measurement results it is found that the coupling increases with frequency on low resistivity silicon substrate while the coupling on glass shows relatively constant peaks. A spacing of 600μm between CPW lines is required to avoid parasitic coupling less than 30dB for frequencies up to 30GHz when fabricated on low resistivity silicon, while a spacing of 200μm is required when fabricated on glass. The conductor width (W) and the slot width (S) for low resistivity silicon is 80μm and 45μm, and on the glass substrate W = 150μm, S = 30μm. Based on full-wave EM simulation results, it is argued that the primary coupling mechanism is through the interaction of higher-order modes.
Keywords :
coplanar waveguides; electromagnetic coupling; silicon; 30 GHz; CMOS grade Si substrates; CPW line-to-line coupling; CPW transmission lines; Si; adjacent coplanar waveguide; conductor width; cyclotene polymer; full-wave EM simulation; glass; higher-order modes interaction; low resistivity silicon; parasitic coupling; primary coupling mechanism; silicon substrate; slot width; Conductivity; Conductors; Coplanar transmission lines; Coplanar waveguides; Couplings; Frequency measurement; Glass; Polymer films; Silicon; Transmission line measurements;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Measurements Conference, 2003. Fall 2003. 62nd ARFTG
Print_ISBN :
0-7803-8195-5
Type :
conf
DOI :
10.1109/ARFTGF.2003.1459782
Filename :
1459782
Link To Document :
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