Title :
Characterization of lead-free solder and sintered nano-silver die-attach layers using thermal impedance
Author :
Cao, Xiao ; Wang, Tao ; Lu, Guo-Quan ; Ngo, Khai D T
Author_Institution :
Center for Power Electron. Syst., Virginia Polytech. Inst. & State Univ., Blacksburg, VA, USA
Abstract :
Since a die-attach layer has significant impact on the thermal performance of a power module, its quality can be characterized using thermal performance. In this paper, a measurement system for thermal impedance is developed to evaluate three die-attach materials. Thanks to its high temperature sensitivity (10 mV/°C), the gate-emitter voltage of an IGBT is used as the temperature-sensitive parameter. The power dissipation in the IGBT is maintained constant regardless of the junction temperature by a feedback loop. Experimental results show that the sample using sintered nano-silver for die-attach has 12.1% lower thermal impedance than the samples using SAC305 and SN100C solders. To check the degradation of the die-attachment, three samples using three die-attach materials were thermally cycled from -40°C to 125°C. The experimental results show that after 500 cycles, the thermal impedance of SAC305 samples and SN100C samples is increased by 12.8% and 15% respectively, which is much higher than the sample using nano-silver paste for die-attach (increased by 4.1%).
Keywords :
microassembling; silver; solders; SAC305 solder; SN100C solder; die-attach materials; feedback loop; gate-emitter voltage; junction temperature; lead-free solder; power dissipation; power module; sintered nano-silver die-attach layers; temperature 40 C to 125 C; thermal impedance; thermal performance; Environmentally friendly manufacturing techniques; Feedback loop; Impedance measurement; Insulated gate bipolar transistors; Lead; Multichip modules; Power dissipation; Temperature sensors; Thermal degradation; Voltage;
Conference_Titel :
Power Electronics Conference (IPEC), 2010 International
Conference_Location :
Sapporo
Print_ISBN :
978-1-4244-5394-8
DOI :
10.1109/IPEC.2010.5543289