Title :
New screening concept for deep submicron CMOS VLSIs using temperature characteristics of leakage currents in MOS devices
Author :
Shimaya, Masakazu
Author_Institution :
NTT Syst. Electron. Lab., Kanagawa, Japan
Abstract :
Temperature dependencies of several kinds of leakage current in MOSFETs were precisely investigated. We proposed the new concept of low-temperature standby-current (LTSC) screening for discriminating highly reliable CMOS LSIs based on the different temperature dependence between the normal and abnormal leakage current. This technique has a sufficient threshold current margin for the pass/fail decision making and is effective for screening deep-submicron CMOS LSIs with low threshold voltage MOSFETs
Keywords :
CMOS integrated circuits; MOSFET; VLSI; integrated circuit reliability; leakage currents; MOSFETs; abnormal leakage current; deep submicron CMOS VLSI; highly reliable CMOS LSI discrimination; leakage currents; low threshold voltage MOSFETs; low-temperature standby-current screening; pass/fail decision making; screening concept; temperature characteristics; temperature dependence; Current supplies; Decision making; Large scale integration; Leakage current; MOSFETs; Power supplies; Subthreshold current; Temperature dependence; Threshold voltage; Very large scale integration;
Conference_Titel :
Reliability Physics Symposium, 1997. 35th Annual Proceedings., IEEE International
Conference_Location :
Denver, CO
Print_ISBN :
0-7803-3575-9
DOI :
10.1109/RELPHY.1997.584234
