DocumentCode :
3460089
Title :
Advanced IGBT chip technology for industrial motor drive applications
Author :
Yamazaki, Tomoyuki ; Onozawa, Yuichi ; Otsuki, Masahito ; Fujishima, Naoto ; Seki, Yasukazu
Author_Institution :
Fuji Electr. Syst. Co., Ltd., Matsumoto, Japan
fYear :
2010
fDate :
21-24 June 2010
Firstpage :
783
Lastpage :
789
Abstract :
The latest 6th generation (6G) IGBTs chip technology suitable for industrial motor drive applications is described in this paper. The 6G-IGBTs with micro-P structure provide better turn-on di/dt controllability, lower turn-off oscillation and better Von-Eoff trade-off relationship. By using the 6G-IGBTs with micro-P, the turn-on power dissipation can be reduced compared to the conventional IGBTs with floating p-base under the operating condition to set the same FWD reverse recovery dv/dt. The trade-off relationship between the on-state voltage drop and the turn-off power dissipation has been improved without the turn-off oscillation even in a severe condition. The impact of the micro-P structure on these characteristics has been demonstrated by using 600 V and 1200 V class IGBTs.
Keywords :
insulated gate bipolar transistors; motor drives; IGBT chip technology; industrial motor drive; micro-P structure; reverse recovery; turn-off power dissipation; turn-on di/dt controllability; voltage 1200 V; voltage 600 V; Controllability; Electronics industry; Frequency; Industrial relations; Insulated gate bipolar transistors; Motor drives; Power dissipation; Power electronics; Uninterruptible power systems; Voltage; Floating p-base layer; IGBT; Micro-P; Turn-on di/dt controllability;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Electronics Conference (IPEC), 2010 International
Conference_Location :
Sapporo
Print_ISBN :
978-1-4244-5394-8
Type :
conf
DOI :
10.1109/IPEC.2010.5543295
Filename :
5543295
Link To Document :
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