Title :
Hot carrier self convergent programming method for multi-level flash cell memory
Author :
Candeller, Ph. ; Mondon, F. ; Guillaumot, B. ; Reimbold, G. ; Achard, H. ; Martin, F. ; Hartmann, J.
Author_Institution :
CEA-Technol. Avancees, Grenoble, France
Abstract :
Flash EEPROM multi-level programming requires accurate control of programmed threshold voltages. A hot carrier convergent programming method with drain current monitoring is proposed to reduce both Vth dispersion and write-erase window closure during endurance test. Feasibility and improved reliability is demonstrated for a four level storage on 0.35 μm flash cells
Keywords :
EPROM; hot carriers; integrated circuit reliability; integrated memory circuits; 0.35 micron; EEPROM; drain current monitoring; endurance testing; hot carrier self convergent programming; multi-level flash cell memory; reliability; threshold voltage dispersion; write-erase window closure; Costs; EPROM; Flash memory; Hot carriers; Monitoring; Nonvolatile memory; Research and development; Testing; Threshold voltage; Voltage control;
Conference_Titel :
Reliability Physics Symposium, 1997. 35th Annual Proceedings., IEEE International
Conference_Location :
Denver, CO
Print_ISBN :
0-7803-3575-9
DOI :
10.1109/RELPHY.1997.584245
