Single-chip dual-band WLAN power amplifier using InGaP/GaAs HBT

Author

Lin, Chien-Cheng ; Hsu, Yu-Cheng

Author_Institution

Comput. & Commun. Res. Labs., Ind. Technol. Res. Inst., Hsinchu, Taiwan

Volume

3

fYear

2005

fDate

4-6 Oct. 2005

Abstract

A single-chip dual-band power amplifier monolithic microwave integrated circuit (MMIC) operating at 3.5V single supply has been developed for both WLAN 2.4GHz and 5.2GHz with IEEE 802.11b/g/a standards applications. The MMIC utilizes the process of WINs Corp. with an InGaP/GaAs HBT process. The dual-band power amplifier constructed based on the design of adaptive RF bias choke circuits and proper output matching networks. The proposed WLAN PA chip provides low current consumption and high power added efficiency. The WLAN-PA is implemented as a two-stage MMIC with active bias and input pre-matching and inter-stage matching networks integrated. In addition, the PA is a broadband power amplifier with above 20dB flat gain between the frequency bands of 2.2GHz to 5.5GHz.

Keywords

III-V semiconductors; MMIC power amplifiers; bipolar MMIC; bipolar analogue integrated circuits; gallium arsenide; indium compounds; wideband amplifiers; wireless LAN; 2.2 to 5.5 GHz; 3.5 V; HBT process; IEEE 802.11bga standard; InGaP-GaAs; MMIC; WLAN PA chip; adaptive RF bias choke circuits; monolithic microwave integrated circuit; output matching networks; single-chip dual-band WLAN power amplifier; Application specific integrated circuits; Dual band; Gallium arsenide; Heterojunction bipolar transistors; MMICs; Microwave amplifiers; Microwave integrated circuits; Power amplifiers; Radiofrequency amplifiers; Wireless LAN;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2005 European

Print_ISBN

2-9600551-2-8

Type

conf

DOI

10.1109/EUMC.2005.1610219

Filename

1610219