DocumentCode
3460280
Title
Evidence of electron-hole cooperation in SiO2 dielectric breakdown
Author
Satake, Hideki ; Takagi, Shin-ichi ; Toriumi, Akira
Author_Institution
ULSI Res. Center, Toshiba Corp., Kawasaki, Japan
fYear
1997
fDate
8-10 Apr 1997
Firstpage
156
Lastpage
163
Abstract
It has been experimentally proved that the coexistence of hot electrons and holes is essential for dielectric breakdown in SiO2 . In order to quantitatively investigate the roles of hot electrons and holes in dielectric breakdown of SiO2, we evaluated the charge to breakdown, Qbd, and the total hole fluence to breakdown, Qp, by separately controlling the amounts of injected electrons and holes with the substrate hot hole (SHH) injection method. This paper is the first report that quantitatively points out the necessity for cooperation of hot electrons and holes in dielectric breakdown in SiO2
Keywords
electric breakdown; hot carriers; silicon compounds; SiO2; charge to breakdown; dielectric breakdown; electron-hole cooperation; hot electrons; hot holes; substrate hot hole injection; total hole fluence to breakdown; Charge carrier processes; Dielectric breakdown; Dielectric substrates; Hot carriers; Laboratories; MOSFET circuits; Silicon; Substrate hot electron injection; Ultra large scale integration; Voltage control;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 1997. 35th Annual Proceedings., IEEE International
Conference_Location
Denver, CO
Print_ISBN
0-7803-3575-9
Type
conf
DOI
10.1109/RELPHY.1997.584253
Filename
584253
Link To Document