Accelerated gate-oxide breakdown in mixed-voltage I/O circuits

Author

Furukawa, T. ; Turner, D. ; Mittl, S. ; Maloney, M. ; Serafin, R. ; Clark, W. ; Bialas, J. ; Longenbach, L. ; Howard, J.

Author_Institution

Microelectron. Div., IBM Corp., Essex Junction, VT, USA

fYear

1997

fDate

8-10 Apr 1997

Firstpage

169

Lastpage

173

Abstract

This paper describes a new mechanism of gate-oxide breakdown fails observed in mixed-voltage I/O circuits during an accelerated product stress. Although no gate-oxide breakdown was expected from Fowler-Nordheim stress, gate-oxide fails were observed only in short-channel PMOSFETs of the mixed-voltage I/O circuits. Accelerated gate-oxide breakdown was attributed to non-conductive channel hot-electron injection at the drain edge

Keywords

CMOS integrated circuits; MOSFET; dielectric thin films; electric breakdown; failure analysis; hot carriers; integrated circuit reliability; life testing; semiconductor device reliability; accelerated gate-oxide breakdown; accelerated product stress; drain edge; mixed-voltage I/O circuits; nonconductive channel hot-electron injection; p-channel MOSFET; reliability stress failures; short-channel PMOSFETs; Acceleration; Boron; CMOS technology; Capacitance; Channel hot electron injection; Circuit testing; Electric breakdown; Microelectronics; Stress; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium, 1997. 35th Annual Proceedings., IEEE International

Conference_Location

Denver, CO

Print_ISBN

0-7803-3575-9

Type

conf

DOI

10.1109/RELPHY.1997.584255

Filename

584255