Title :
Effect of texture on the electromigration of CVD copper
Author :
Ryu, Changsup ; Loke, Alvin L S ; Nogami, Takeshi ; Wong, S. Simon
Author_Institution :
Center for Integrated Syst., Stanford Univ., CA, USA
Abstract :
We have studied the effect of texture on the electromigration lifetime of CVD Cu. Using the proper seed layers, either (111) or (200) textured CVD Cu films with similar grain size distributions have been obtained. The electromigration lifetime of (111) CVD Cu is about four times longer than that of (200) CVD Cu. The activation energy of electromigration is about 0.8 eV for both (111) and (200) CVD Cu films
Keywords :
CVD coatings; copper; electromigration; grain size; metallic thin films; metallisation; texture; CVD copper film; Cu; activation energy; electromigration lifetime; grain size; seed layer; texture; Anisotropic magnetoresistance; Copper alloys; Differential equations; Electromigration; Grain size; Large scale integration; Optical films; Optical reflection; Steel; X-ray diffraction;
Conference_Titel :
Reliability Physics Symposium, 1997. 35th Annual Proceedings., IEEE International
Conference_Location :
Denver, CO, USA
Print_ISBN :
0-7803-3575-9
DOI :
10.1109/RELPHY.1997.584260
