DocumentCode
3460423
Title
Effect of texture on the electromigration of CVD copper
Author
Ryu, Changsup ; Loke, Alvin L S ; Nogami, Takeshi ; Wong, S. Simon
Author_Institution
Center for Integrated Syst., Stanford Univ., CA, USA
fYear
1997
fDate
8-10 April 1997
Firstpage
201
Lastpage
205
Abstract
We have studied the effect of texture on the electromigration lifetime of CVD Cu. Using the proper seed layers, either (111) or (200) textured CVD Cu films with similar grain size distributions have been obtained. The electromigration lifetime of (111) CVD Cu is about four times longer than that of (200) CVD Cu. The activation energy of electromigration is about 0.8 eV for both (111) and (200) CVD Cu films
Keywords
CVD coatings; copper; electromigration; grain size; metallic thin films; metallisation; texture; CVD copper film; Cu; activation energy; electromigration lifetime; grain size; seed layer; texture; Anisotropic magnetoresistance; Copper alloys; Differential equations; Electromigration; Grain size; Large scale integration; Optical films; Optical reflection; Steel; X-ray diffraction;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 1997. 35th Annual Proceedings., IEEE International
Conference_Location
Denver, CO, USA
Print_ISBN
0-7803-3575-9
Type
conf
DOI
10.1109/RELPHY.1997.584260
Filename
584260
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