Effect of Al-W intermetallic compounds on electromigration in Al/CVD-W interconnects

Author

Sekiguchi, Mitsuru ; Yamanaka, Michinari ; Mayumi, Shuichi

Author_Institution

Semicond. Res. Center, Matsushita Electr. Ind. Co. Ltd., Osaka, Japan

fYear

1997

fDate

8-10 Apr 1997

Firstpage

221

Lastpage

225

Abstract

In the Al/CVD-W lines with W oxide at Al/W interface, electromigration life time becomes 10 times longer than that of the lines without W oxide. In the lines with W oxide, Al₂(WO₃)₄ and WAl₅ formation suppressed WAl₁₂ formation during annealing at 450°C, and WAl₅ is formed at Al grain boundary. Activation energy measurement shows grain boundary diffusion is suppressed in the lines with W oxide. Plasma nitridation of W surface prevents these intermetallic compounds formation during annealing, but it causes a nonuniform Al grain growth, which hinders the improvement in electromigration

Keywords

CVD coatings; aluminium; annealing; electromigration; grain boundary diffusion; grain growth; integrated circuit interconnections; integrated circuit metallisation; nitridation; tungsten; 450 C; Al-W; Al-W intermetallic compound; Al/CVD-W bilayer interconnect; Al/W interface; W oxide; activation energy; annealing; electromigration lifetime; grain boundary diffusion; grain growth; plasma nitridation; Annealing; Artificial intelligence; Electromigration; Etching; Intermetallic; Plasma applications; Plasma temperature; Sputtering; Surface resistance; Tin;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium, 1997. 35th Annual Proceedings., IEEE International

Conference_Location

Denver, CO

Print_ISBN

0-7803-3575-9

Type

conf

DOI

10.1109/RELPHY.1997.584264

Filename

584264