Organic memory device with large conductance switching based on oxadiazole—containing polyether thin films

Organic memory devices were realized using oxadiazole-containing polyether as active organic layer. A thin film containing this molecule was sandwiched between n-type silicon substrate (cathode) and aluminum (anode) electrodes. The memory cells showed an on-off ratio of 4.9 orders of magnitude at 1.3 V and a threshold voltage of about 2.9 V. The analysis of transport was realized considering space charge limited conduction (SCLS) and Pai-Gill hopping models. Thanks to the Si-technology integrability and the simplicity of the realization technique, the proposed device is more attractive for low-cost applications.