Title :
InGaP/GaAs HBT MMICs for 5-GHz-band wireless applications - a high P1 dB, 23/4-dB step-gain low-noise amplifier and a power amplifier
Author :
Yamamoto, K. ; Suzuki, S. ; Ogawa, N. ; Shimura, T. ; Maemura, K.
Author_Institution :
High Frequency & Opt. Device Works, Mitsubishi Electr. Corp., Hyogo, Japan
Abstract :
This paper describes the circuit design and measurement results of two InGaP/GaAs HBT MMICs, a low-noise amplifier (LNA) and a power amplifier (PA), for 5-GHz-band wireless LAN applications. The LNA including all on-chip matching and bias feed circuits delivers a high P1 dB of 13.5 dBm, a 23/4-dB step gain switching, and 2.4/3.6-dB low noise figure while keeping a low current consumption of 9.2 mA at 3 V. The PA featuring on-chip input and output matching exhibits 23.2 dBm of P1 dB and 23.2 dB of power gain with 30% PAE from 3.0-V power supply.
Keywords :
III-V semiconductors; MMIC power amplifiers; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; integrated circuit design; noise; power bipolar transistors; wireless LAN; 13.5 dB; 2.4 dB; 3 V; 3.6 dB; 5 GHz; 9.2 mA; InGaP-GaAs; InGaP-GaAs HBT MMIC; LNA; circuit design; current consumption; heterojunction bipolar transistor; low-noise amplifier; on-chip matching; power amplifier; wireless applications; Circuit synthesis; Feeds; Gallium arsenide; Heterojunction bipolar transistors; High power amplifiers; Low-noise amplifiers; MMICs; Power measurement; Switching circuits; Wireless LAN;
Conference_Titel :
Microwave Symposium Digest, 2004 IEEE MTT-S International
Print_ISBN :
0-7803-8331-1
DOI :
10.1109/MWSYM.2004.1336039
