Title :
Current gain long-term instability of AlGaAs/GaAs HBT: physical mechanism and SPICE simulation
Author :
Sheu, S. ; Lieu, J.J. ; Huang, C.I.
Author_Institution :
Dept. of Electr. & Comput. Eng., Central Florida Univ., Orlando, FL, USA
Abstract :
The current gain instability of AlGaAs/GaAs heterojunction bipolar transistor (HBT) is investigated, and a new AlGaAs/GaAs HBT model for SPICE circuit simulation is presented. Such a model includes the effects of base and collector leakage currents and the stress-induced abnormal base current, thus allowing the simulation of the performance of HBT circuits subjected to the electrical/thermal stress test (i.e. burn-in test)
Keywords :
III-V semiconductors; SPICE; aluminium compounds; circuit analysis computing; equivalent circuits; gallium arsenide; heterojunction bipolar transistors; leakage currents; semiconductor device models; semiconductor device reliability; stability; AlGaAs-GaAs; AlGaAs/GaAs HBT; HBT circuit simulation; HBT model; SPICE simulation; base leakage currents; burn-in test; collector leakage currents; current gain long-term instability; electrical stress test; heterojunction bipolar transistor; physical mechanism; stress-induced abnormal base current; thermal stress test; Circuit simulation; Circuit testing; Computational modeling; Current measurement; Dielectric substrates; Gallium arsenide; Heterojunction bipolar transistors; Integrated circuit modeling; Leakage current; SPICE;
Conference_Titel :
Reliability Physics Symposium, 1997. 35th Annual Proceedings., IEEE International
Conference_Location :
Denver, CO
Print_ISBN :
0-7803-3575-9
DOI :
10.1109/RELPHY.1997.584268
