Title :
Screening for early and rapid degradation in GaAs/AlGaAs HBTs
Author :
Henderson, Tim ; Tutt, Marcel
Author_Institution :
Corporate R&D, Texas Instrum. Inc., Dallas, TX, USA
Abstract :
We describe a series of pre-stress measurements, including optical inspection, DC parameter tests, electroluminescence, and noise measurements on GaAs/AlGaAs HBTs designed to screen out devices that suffer early failure. A bias stress test on these devices was then performed, and the correlation between lifetime of the devices and the pre-stress tests is determined, For this particular set of devices, optical inspection and electroluminescence showed the best correlation. We also describe the complicated relationship between pre- and post-stress noise characteristics in HBTs
Keywords :
III-V semiconductors; aluminium compounds; electric noise measurement; electroluminescence; failure analysis; gallium arsenide; heterojunction bipolar transistors; inspection; life testing; semiconductor device noise; semiconductor device reliability; semiconductor device testing; DC parameter tests; GaAs-AlGaAs; HBTs; bias stress test; degradation; device lifetime; device screening; early failure; electroluminescence; noise characteristics; noise measurements; optical inspection; pre-stress measurements; Degradation; Electroluminescent devices; Gallium arsenide; Inspection; Life testing; Noise measurement; Optical design; Optical devices; Optical noise; Stress;
Conference_Titel :
Reliability Physics Symposium, 1997. 35th Annual Proceedings., IEEE International
Conference_Location :
Denver, CO
Print_ISBN :
0-7803-3575-9
DOI :
10.1109/RELPHY.1997.584269
