DocumentCode
3460570
Title
Rapid degradation of InGaAsP/InP laser diodes due to copper contamination
Author
Fujihara, Kiyoshi ; Ishino, Masato ; Matsui, Yasushi
Author_Institution
Semicond. Res. Center, Matsushita Electr. Ind. Co. Ltd., Moriguchi, Japan
fYear
1997
fDate
8-10 Apr 1997
Firstpage
268
Lastpage
271
Abstract
The influence of copper contamination upon rapid degradation of InGaAsP/InP buried-heterostructure laser diodes under accelerated high stress aging test is investigated, for the first time. Strong correlation between the quantity of contaminated copper in the laser diodes and the degradation of lasing characteristics is confirmed
Keywords
III-V semiconductors; ageing; gallium arsenide; gallium compounds; impurities; indium compounds; laser variables measurement; life testing; semiconductor device reliability; semiconductor device testing; semiconductor lasers; BH laser diodes; Cu; Cu contamination; InGaAsP-InP; accelerated high stress aging test; buried-heterostructure LD; laser diode; lasing characteristics degradation; rapid degradation; Aging; Alloying; Contamination; Copper; Degradation; Diode lasers; Gold; Indium phosphide; Power system reliability; Stress;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 1997. 35th Annual Proceedings., IEEE International
Conference_Location
Denver, CO
Print_ISBN
0-7803-3575-9
Type
conf
DOI
10.1109/RELPHY.1997.584271
Filename
584271
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