Title :
Rapid degradation of InGaAsP/InP laser diodes due to copper contamination
Author :
Fujihara, Kiyoshi ; Ishino, Masato ; Matsui, Yasushi
Author_Institution :
Semicond. Res. Center, Matsushita Electr. Ind. Co. Ltd., Moriguchi, Japan
Abstract :
The influence of copper contamination upon rapid degradation of InGaAsP/InP buried-heterostructure laser diodes under accelerated high stress aging test is investigated, for the first time. Strong correlation between the quantity of contaminated copper in the laser diodes and the degradation of lasing characteristics is confirmed
Keywords :
III-V semiconductors; ageing; gallium arsenide; gallium compounds; impurities; indium compounds; laser variables measurement; life testing; semiconductor device reliability; semiconductor device testing; semiconductor lasers; BH laser diodes; Cu; Cu contamination; InGaAsP-InP; accelerated high stress aging test; buried-heterostructure LD; laser diode; lasing characteristics degradation; rapid degradation; Aging; Alloying; Contamination; Copper; Degradation; Diode lasers; Gold; Indium phosphide; Power system reliability; Stress;
Conference_Titel :
Reliability Physics Symposium, 1997. 35th Annual Proceedings., IEEE International
Conference_Location :
Denver, CO
Print_ISBN :
0-7803-3575-9
DOI :
10.1109/RELPHY.1997.584271
