A 150 to 220 GHz balanced doubler MMIC using a 50 nm metamorphic HEMT technology

Author

Schwörer, C. ; Roca, Y. Campos ; Leuther, A. ; Tessmann, A. ; Seelmann-Eggebert, M. ; Massler, H. ; Schlechtweg, M. ; Weiman, G.

Author_Institution

Fraunhofer-Inst. for Appl. Solid State Phys., Tullastrasse, Germany

Volume

3

fYear

2005

fDate

4-6 Oct. 2005

Abstract

A coplanar millimeter wave doubler MMIC covering the entire G-band was developed. Based on a 50 nm metamorphic HEMT technology, the circuit demonstrates an output power of more than -12 dBm between 150 and 220 GHz for an input power of 0 dBm. By increasing the input power to 12 dBm an output power exceeding 0 dBm was obtained in the frequency range between 180 and 220 GHz. Good fundamental rejection was ensured by using a Marchand balun for balancing the design. The doubler was also used to provide the LO signal for a 170 to 200 GHz resistive FET mixer, yielding a conversion loss of 10 dB.

Keywords

HEMT integrated circuits; MMIC frequency convertors; baluns; frequency multipliers; millimetre wave frequency convertors; millimetre wave integrated circuits; 150 to 220 GHz; 50 nm; FET mixer; G-band range; Marchand balun; coplanar millimeter wave doubler MMIC; metamorphic high electron mobility transistors; Acoustic sensors; FETs; MMICs; Millimeter wave technology; Optical sensors; Power generation; Resonant frequency; Sensor phenomena and characterization; Varactors; mHEMTs;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2005 European

Print_ISBN

2-9600551-2-8

Type

conf

DOI

10.1109/EUMC.2005.1610238

Filename

1610238