An empirical lifetime projection method for laser diode degradation

Author

Hwang, Nam ; Kang, Seung-Goo ; Lee, Hee-Tae ; Park, Seong-Su ; Song, Min-Kyu ; Pyun, Kwang-Eui

Author_Institution

Compound Semicond. Res. Dept., Electron. & Telecommun. Res. Inst., Taejeon, South Korea

fYear

1997

fDate

8-10 Apr 1997

Firstpage

272

Lastpage

275

Abstract

An empirical method for lifetime projection of 1.55 μm InGaAs-InP MQW-DFB laser diodes (LD) is presented. On the basis of experimental results of an accelerated aging test for 1500 hours, relationship between LD degradation, operating voltage, and ambient temperature has been determined. The presented method makes it possible to predict the lifetime of LDs by determining the thermal voltage ratio

Keywords

III-V semiconductors; ageing; distributed feedback lasers; gallium arsenide; indium compounds; laser transitions; life testing; quantum well lasers; semiconductor device reliability; 1.55 micron; 1500 hr; InGaAs-InP; LD degradation; MQW DFB LD; accelerated aging test; ambient temperature; empirical lifetime projection method; laser diode degradation; operating voltage; semiconductor lasers; thermal voltage ratio; Accelerated aging; Artificial intelligence; Diode lasers; Extrapolation; Monitoring; Quantum well devices; Temperature; Testing; Thermal degradation; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium, 1997. 35th Annual Proceedings., IEEE International

Conference_Location

Denver, CO

Print_ISBN

0-7803-3575-9

Type

conf

DOI

10.1109/RELPHY.1997.584272

Filename

584272