Title :
III–V nitride microcantilever as a displacement sensor
Author :
Talukdar, Abdul ; Koley, Goutam
Author_Institution :
Univ. of South Carolina, Columbia, SC, USA
Abstract :
The application of gated piezoresitor (or `piezotransistor´) embedded GaN microcantilever utilizing unique properties of AlGaN/GaN Heterojunction Field Effect Transistor (HFET) to very significantly enhance the device performance in order to transduce femtoscale displacement have been demonstrated. This novel technology offers several orders higher sensitivity than state-of-the-art and enabled detection of minute explosive in open ambient by photoacoustic spectroscopy.
Keywords :
III-V semiconductors; aluminium compounds; cantilevers; displacement measurement; explosive detection; field effect transistors; gallium compounds; intelligent sensors; microsensors; photoacoustic spectroscopy; transducers; wide band gap semiconductors; AlGaN-GaN; GaN; HFET; III-V nitride embedded microcantilever; displacement sensor; explosive detection; femtoscale displacement transducer; gated piezoresitor; heterojunction field effect transistor; photoacoustic spectroscopy; piezotransistor; Aluminum gallium nitride; Gallium nitride; HEMTs; MODFETs; Oscillators; Silicon; Wide band gap semiconductors; HFET; III–V nitride; MEMS; Piezoresistor; microcantilever;
Conference_Titel :
Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS), 2015 Transducers - 2015 18th International Conference on
Conference_Location :
Anchorage, AK
DOI :
10.1109/TRANSDUCERS.2015.7180891
