DocumentCode
3461107
Title
A C-band high efficiency second harmonic tuned hybrid power amplifier in GaN technology
Author
Colantonio, P. ; Giannini, F. ; Giofrè, R. ; Limiti, E. ; Serino, A. ; Peroni, M. ; Romanini, P. ; Proietti, C.
Author_Institution
Dept. of Electron. Eng., Rome Univ. "Tor Vergata", Italy
Volume
3
fYear
2005
fDate
4-6 Oct. 2005
Abstract
In this contribution, a C-band 2nd harmonic tuned hybrid power amplifier utilizing a PHEMT GaN device is presented, together with technological aspects, nonlinear device model and adopted design criteria. The amplifier has been realised in hybrid form, exhibiting a bandwidth larger than 20% around 5.5GHz, with a minimum output power of 33 dBm, and a drain efficiency of 60% at the centre frequency.
Keywords
HEMT circuits; III-V semiconductors; gallium compounds; microwave power amplifiers; wide band gap semiconductors; C-band second harmonic tuned hybrid power amplifier; GaN; PHEMT device; nonlinear device model; Breakdown voltage; Gallium nitride; Gold; HEMTs; High power amplifiers; Power amplifiers; Power generation; Power system harmonics; Silicon carbide; Silicon compounds;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 2005 European
Print_ISBN
2-9600551-2-8
Type
conf
DOI
10.1109/EUMC.2005.1610265
Filename
1610265
Link To Document