Noise spectral density measurements of a radiation hardened CMOS process in the weak and moderate inversion

Author

Tedja, S. ; Williams, H.H. ; Van der Spiegel, J. ; Newcomer, F.M. ; Van Berg, R.

Author_Institution

Pennsylvania Univ., Philadelphia, PA, USA

fYear

1991

fDate

2-9 Nov. 1991

Firstpage

1510

Abstract

The authors have measured the noise of MOS transistors of the United Technology Microelectronics Center (UTMC) 1.2- mu m radiation-hardened CMOS p-well process from the weak to moderate inversion region. The noise power spectral densities of both NMOS and PMOS devices were measured from 1 kHz to 50 MHz. The bandwidth was chosen such that the important components of the spectral densities such as the white thermal noise and the 1/f noise could be easily resolved and analyzed in detail. The effects of different device terminal DC biases and channel geometries on the noise are described.<>

Keywords

CMOS integrated circuits; integrated circuit technology; radiation hardening (electronics); random noise; semiconductor device noise; white noise; 1 kHz to 50 MHz; 1.2 micron; 1/f noise; MOS transistors; NMOS; PMOS; channel geometries; moderate inversion region; noise power spectral densities; p-well process; radiation hardened CMOS process; terminal DC biases; weak inversion; white thermal noise; Bandwidth; CMOS process; CMOS technology; Density measurement; MOS devices; MOSFETs; Microelectronics; Noise measurement; Power measurement; Radiation hardening;

fLanguage

English

Publisher

ieee

Conference_Titel

Nuclear Science Symposium and Medical Imaging Conference, 1991., Conference Record of the 1991 IEEE

Conference_Location

Santa Fe, NM, USA

Print_ISBN

0-7803-0513-2

Type

conf

DOI

10.1109/NSSMIC.1991.259161

Filename

259161