Title :
Study of a radiation hard CMOS process under the influence of Co/sup 60/ irradiation
Author :
Yau, T.Y. ; Williams, H.H. ; Van der Spiegel, J. ; Van Berg, R.
Author_Institution :
Pennsylvania Univ., Philadelphia, PA, USA
Abstract :
Test structures fabricated in the UTMC (United Technology Microelectronics Center) 1.2- mu m p-well CMOS process were irradiated by Co/sup 60/ up to 3.8 Mrad. The threshold voltage shifts, Delta V/sub t/, of the NMOS were less than 270 mV, and those of the PMOS were less than 200 mV. The transconductance and transconductance parameter, KP, decreased by about 25% and 10%, for the NMOS and PMOS, respectively. The output conductance did not change much up to 3.8 Mrad. In addition, the change in mobility did not depend on the width and length of the transistor, but Delta V/sub t /of the NMOS, after 1.7 Mrad of irradiation, is shown to depend slightly on the length of the transistor.<>
Keywords :
CMOS integrated circuits; gamma-ray effects; integrated circuit technology; radiation hardening (electronics); /sup 60/Co; 1.2 micron; 1.7 Mrad; 200 mV; 270 mV; 3.8 Mrad; NMOS; PMOS; gamma irradiation; mobility; p-well CMOS process; radiation hard CMOS process; threshold voltage shifts; transconductance parameter; transistor; CMOS process; Capacitance; Geometry; MOS devices; MOSFETs; Semiconductor device measurement; Temperature; Testing; Threshold voltage; Transconductance;
Conference_Titel :
Nuclear Science Symposium and Medical Imaging Conference, 1991., Conference Record of the 1991 IEEE
Conference_Location :
Santa Fe, NM, USA
Print_ISBN :
0-7803-0513-2
DOI :
10.1109/NSSMIC.1991.259165
