Noise measurements on radiation-hardened CMOS transistors

Author

Dabrowski, W. ; Kajetanowicz, Marcin ; Kidwell, D. ; Rowe, W.A. ; Sadrozinski, H.F.-W. ; Spencer, E.N. ; Tenenbaum, P. ; Turala, M. ; Wilder, M. ; Spieler, H.

Author_Institution

Santa Cruz Inst. for Particle Phys., California Univ., CA, USA

fYear

1991

fDate

2-9 Nov. 1991

Firstpage

1536

Abstract

The authors present a measurement of the spectral noise density of radiation-hardened CMOS transistors. The motivation of this work is the design of a low-power, low-noise frontend with fast shaping for a silicon microstrip tracking detector for the SSC (Superconducting Super Collider). NMOS and PMOS transistors with widths varying from 75 mu m to 1332 mu m and lengths of 1.2, 2.2 and 3.2 mu m produced by UTMC (United Technology Microelectronics Center) were subjected to total /sup 60/Co doses of up to 5 Mrad. Radiation effects on the transconductance and on both the white and the frequency-dependent noise are described.<>

Keywords

insulated gate field effect transistors; radiation hardening (electronics); semiconductor device noise; /sup 60/Co doses; 1.2 to 3.2 micron; 5 Mrad; 75 to 1332 micron; PMOS transistors; Si microstrip tracking detector; Superconducting Super Collider; United Technology Microelectronics Center; frequency-dependent noise; radiation-hardened CMOS transistors; spectral noise density; transconductance; white noise; Density measurement; Detectors; MOS devices; MOSFETs; Microelectronics; Microstrip; Noise measurement; Noise shaping; Silicon; Superconducting device noise;

fLanguage

English

Publisher

ieee

Conference_Titel

Nuclear Science Symposium and Medical Imaging Conference, 1991., Conference Record of the 1991 IEEE

Conference_Location

Santa Fe, NM, USA

Print_ISBN

0-7803-0513-2

Type

conf

DOI

10.1109/NSSMIC.1991.259168

Filename

259168