Title :
Noise measurements on radiation-hardened CMOS transistors
Author :
Dabrowski, W. ; Kajetanowicz, Marcin ; Kidwell, D. ; Rowe, W.A. ; Sadrozinski, H.F.-W. ; Spencer, E.N. ; Tenenbaum, P. ; Turala, M. ; Wilder, M. ; Spieler, H.
Author_Institution :
Santa Cruz Inst. for Particle Phys., California Univ., CA, USA
Abstract :
The authors present a measurement of the spectral noise density of radiation-hardened CMOS transistors. The motivation of this work is the design of a low-power, low-noise frontend with fast shaping for a silicon microstrip tracking detector for the SSC (Superconducting Super Collider). NMOS and PMOS transistors with widths varying from 75 mu m to 1332 mu m and lengths of 1.2, 2.2 and 3.2 mu m produced by UTMC (United Technology Microelectronics Center) were subjected to total /sup 60/Co doses of up to 5 Mrad. Radiation effects on the transconductance and on both the white and the frequency-dependent noise are described.<>
Keywords :
insulated gate field effect transistors; radiation hardening (electronics); semiconductor device noise; /sup 60/Co doses; 1.2 to 3.2 micron; 5 Mrad; 75 to 1332 micron; PMOS transistors; Si microstrip tracking detector; Superconducting Super Collider; United Technology Microelectronics Center; frequency-dependent noise; radiation-hardened CMOS transistors; spectral noise density; transconductance; white noise; Density measurement; Detectors; MOS devices; MOSFETs; Microelectronics; Microstrip; Noise measurement; Noise shaping; Silicon; Superconducting device noise;
Conference_Titel :
Nuclear Science Symposium and Medical Imaging Conference, 1991., Conference Record of the 1991 IEEE
Conference_Location :
Santa Fe, NM, USA
Print_ISBN :
0-7803-0513-2
DOI :
10.1109/NSSMIC.1991.259168
