Performance of silicon trigger counters in the Megarad range

Author

Beha, T. ; Dünnweber, W. ; Klein, P. ; Lutz, G.

Author_Institution

Sektion Phys., Munchen Univ., Garching, Germany

fYear

1991

fDate

2-9 Nov. 1991

Firstpage

1546

Abstract

The response of p-i-n diodes and of novel pixel counters, capable of signal storage, to high radiation doses was studied systematically by means of 10-MeV proton beams scattered from gold foils. The leakage current shows a more than proportional increase with increasing dose and an exponential dependence on temperature. The cooled (-50 degrees C) p-i-n diodes remain operational at the highest dose of 17.6 Mrad. As specific radiation effects of the DEPMOS counter, incorporating a MOS transistor structure on a fully depleted bulk of 280- mu m thickness, shifts of the transmission characteristics and a decrease of the acceptance period of the internal gate which allows for nondestructive readout have been observed. Annealing at room temperature was studied for both detector types.<>

Keywords

proton detection and measurement; semiconductor counters; -50 degC; 1.76*10/sup 7/ rad; 10 MeV; 280 micron; Au foils; DEPMOS counter; MOS transistor structure; Megarad range; Si trigger counters performance; acceptance period; exponential temperature dependence; high radiation doses; internal gate; leakage current; nondestructive readout; novel pixel counters; p-i-n diodes; room temperature annealing; signal storage; transmission characteristics; Counting circuits; Gold; Leakage current; P-i-n diodes; Particle beams; Radiation detectors; Radiation effects; Scattering; Silicon; Temperature dependence;

fLanguage

English

Publisher

ieee

Conference_Titel

Nuclear Science Symposium and Medical Imaging Conference, 1991., Conference Record of the 1991 IEEE

Conference_Location

Santa Fe, NM, USA

Print_ISBN

0-7803-0513-2

Type

conf

DOI

10.1109/NSSMIC.1991.259170

Filename

259170