• DocumentCode
    3461520
  • Title

    The size limit of Al/Ni multilayer rectangular cuboids for generating self-propagating exothermic reaction on a Si wafer

  • Author

    Ito, Satoshi ; Inoue, Shingo ; Namazu, T.

  • Author_Institution
    Dept. of Mech. & Syst. Eng., Univ. of Hyogo, Himeji, Japan
  • fYear
    2013
  • fDate
    16-20 June 2013
  • Firstpage
    1927
  • Lastpage
    1930
  • Abstract
    In this study, the size limit of Al/Ni nano-multilayered rectangular cuboids for the self-propagation of their exothermic reaction on a Si wafer was investigated. After Al/Ni multilayer films were deposited on a Si wafer, micro-sized rectangular cuboids were formed from the films using focused ion beam. By applying a small spark to the cuboids, we have tried to make them exothermic reaction. As the result, both of reacted and unreacted cuboids were found. In the cuboids with higher aspect ratio and smaller one-side length, the reaction easily occurred. The cause of the size effect was discussed in the viewpoint of thermal conductivity of a Si substrate.
  • Keywords
    aluminium; chemical reactions; focused ion beam technology; multilayers; nanofabrication; nanostructured materials; nickel; silicon; sputter deposition; thermal conductivity; Al-Ni; Si; focused ion beam; microsized rectangular cuboid; nanomultilayered rectangular cuboid; self-propagating exothermic reaction generation; size limit; unreacted cuboid; Fabrication; Films; Heating; Nickel; Nonhomogeneous media; Silicon; Substrates; Al/Ni multilayer film; exothermic reaction; size effect; solder bonding;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS & EUROSENSORS XXVII), 2013 Transducers & Eurosensors XXVII: The 17th International Conference on
  • Conference_Location
    Barcelona
  • Type

    conf

  • DOI
    10.1109/Transducers.2013.6627170
  • Filename
    6627170