DocumentCode
3461520
Title
The size limit of Al/Ni multilayer rectangular cuboids for generating self-propagating exothermic reaction on a Si wafer
Author
Ito, Satoshi ; Inoue, Shingo ; Namazu, T.
Author_Institution
Dept. of Mech. & Syst. Eng., Univ. of Hyogo, Himeji, Japan
fYear
2013
fDate
16-20 June 2013
Firstpage
1927
Lastpage
1930
Abstract
In this study, the size limit of Al/Ni nano-multilayered rectangular cuboids for the self-propagation of their exothermic reaction on a Si wafer was investigated. After Al/Ni multilayer films were deposited on a Si wafer, micro-sized rectangular cuboids were formed from the films using focused ion beam. By applying a small spark to the cuboids, we have tried to make them exothermic reaction. As the result, both of reacted and unreacted cuboids were found. In the cuboids with higher aspect ratio and smaller one-side length, the reaction easily occurred. The cause of the size effect was discussed in the viewpoint of thermal conductivity of a Si substrate.
Keywords
aluminium; chemical reactions; focused ion beam technology; multilayers; nanofabrication; nanostructured materials; nickel; silicon; sputter deposition; thermal conductivity; Al-Ni; Si; focused ion beam; microsized rectangular cuboid; nanomultilayered rectangular cuboid; self-propagating exothermic reaction generation; size limit; unreacted cuboid; Fabrication; Films; Heating; Nickel; Nonhomogeneous media; Silicon; Substrates; Al/Ni multilayer film; exothermic reaction; size effect; solder bonding;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS & EUROSENSORS XXVII), 2013 Transducers & Eurosensors XXVII: The 17th International Conference on
Conference_Location
Barcelona
Type
conf
DOI
10.1109/Transducers.2013.6627170
Filename
6627170
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