Ultra-thin atomic layer deposition films for corrosion resistance

Author

Haemmerli, A.J. ; Doll, J.C. ; Provine, J. ; Howe, R.T. ; Goldhaber-Gordon, D. ; Pruitt, B.L.

Author_Institution

Mech. Eng., Stanford Univ., Stanford, CA, USA

fYear

2013

fDate

16-20 June 2013

Firstpage

1931

Lastpage

1934

Abstract

We evaluated the chemical and electrochemical corrosion resistance of ultra-thin films deposited via atomic layer deposition (ALD) for potential wafer-scale passivation of biomedical microdevices. A variety of ALD coatings can be deposited conformally on metal or silicon surfaces at low temperature. We were able to protect aluminum electrodes against corrosion in ionic media with a voltage stress of 1V for 200 hours using a double ALD film stack of 5nm Al₂O₃ and 5nm HfO₂.

Keywords

alumina; atomic layer deposition; bioMEMS; corrosion resistance; dielectric thin films; hafnium compounds; passivation; wafer level packaging; zirconium compounds; ALD coatings; Al₂O₃; HfO₂; Si; ZrO₂; aluminum electrodes; biomedical microdevices; electrochemical corrosion resistance; metal surfaces; silicon surfaces; size 5 nm; time 200 hour; ultrathin atomic layer deposition films; voltage 1 V; wafer-scale passivation; Aluminum oxide; Coatings; Corrosion; Electrodes; Films; Hafnium compounds; ALD; MEMS; Passivation; atomic layer deposition; biocompatible; corrosion; packaging; thin film;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS & EUROSENSORS XXVII), 2013 Transducers & Eurosensors XXVII: The 17th International Conference on

Conference_Location

Barcelona

Type

conf

DOI

10.1109/Transducers.2013.6627171

Filename

6627171