Title :
Effect of surface morphology and crystal orientations on fracture strength of thin film (110) single crystal silicon
Author :
Uesugi, A. ; Hirai, Yuki ; Sugano, K. ; Tsuchiya, Takao ; Tabata, Osamu
Author_Institution :
Kyoto Univ., Kyoto, Japan
Abstract :
We report the effects of surface damage and crystal orientations on fracture strength of single crystal silicon. Tensile tests of nine types of specimens from (110) SOI wafer, i.e. specimens of three crystal orientations with three different surface morphologies prepared by the specimen patterning process, showed that surface morphology improvement doubled average tensile strength: e.g. 〈110〉 strength varied from 1.8 GPa to 3.6 GPa, while average tensile strength difference among crystal orientations was less than 20 % on each fabrication conditions. Using SEM observation, we found tensile fracture characteristics of three crystal orientations: in 〈100〉 specimens the fracture origin location changed by the fabrication conditions, while 〈110〉 and 〈111〉 specimens respectively showed quantitative relationships between surface morphology and tensile strength common to different fabrication conditions.
Keywords :
crystal orientation; elemental semiconductors; fracture toughness; scanning electron microscopy; semiconductor thin films; silicon; silicon-on-insulator; surface morphology; tensile strength; tensile testing; (110) SOI wafer; SEM; Si; crystal orientations; fracture strength; specimen patterning process; surface damage; surface morphology; tensile fracture; tensile strength; tensile tests; thin film (110) single crystal silicon; Crystals; Fabrication; Morphology; Silicon; Surface cracks; Surface morphology; Surface treatment; Fractography; Fracture Strength; Single Crystal Silicon; Tensile Test; Thin Film;
Conference_Titel :
Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS & EUROSENSORS XXVII), 2013 Transducers & Eurosensors XXVII: The 17th International Conference on
Conference_Location :
Barcelona
DOI :
10.1109/Transducers.2013.6627175