Title :
Effect of stresses on electromigration
Author :
Rosenmayer, C.T. ; Brotzen, F.R. ; McPherson, J.W. ; Dunn, C.F.
Author_Institution :
Rice Univ., Houston, TX, USA
Abstract :
The influence of mechanical stress on electromigrational damage was determined by direct observation of void formation in 1- mu m-thick Al-Si(1%) metallizations deposited on Si/SiO/sub 2/ substrates after the metallizations had been subjected simultaneously to high current densities and controlled tensile stresses. The results were interpreted by considering vacancy diffusion as well as nucleation and growth of voids. The analysis points to a strong effect of stress on the nucleation of voids, with only minor effects on the electromigrational diffusion of vacancies.<>
Keywords :
aluminium alloys; electromigration; metallisation; nucleation; silicon alloys; 1 micron; AlSi-Si-SiO/sub 2/; current densities; electromigration; electromigrational diffusion; mechanical stress; nucleation; tensile stresses; vacancy diffusion; void formation; voids; Current density; Electromigration; Instruments; Metallization; Plastics; Silicon; Stress control; Telephony; Temperature; Tensile stress;
Conference_Titel :
Reliability Physics Symposium, 1991, 29th Annual Proceedings., International
Conference_Location :
Las Vegas, NV, USA
Print_ISBN :
0-87942-680-2
DOI :
10.1109/RELPHY.1991.145986
