DocumentCode :
3462065
Title :
Formation of texture controlled aluminum and its migration performance in Al-Si/TiN stacked structure
Author :
Kageyama, Makiko ; Hashimoto, Keiichi ; Onoda, Hiroshi
Author_Institution :
Oki Electr. Ind. Co. Ltd., Tokyo, Japan
fYear :
1991
fDate :
9-11 April 1991
Firstpage :
97
Lastpage :
101
Abstract :
An Al/TiN stacked structure has been investigated with respect to texture control of the films and their migration resistance. The Al on TiN film was observed to have the same preferred crystal orientation as the underlayer TiN film. TiN film texture can be controlled by changing its deposition conditions. Texture controlled Al films can be formed by using these TiN films. In these stacked structures, Al film with stronger
Keywords :
aluminium alloys; electromigration; metallisation; nitridation; reliability; silicon alloys; AlSi-TiN; deposition conditions; electromigration lifetime; migration performance; nitridation; preferred crystal orientation; reliability; stacked structures; stress induced voids; texture control; Aluminum; Grain size; Sputtering; Stress; Substrates; Testing; Tin; Very large scale integration; Voltage; X-ray scattering;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Reliability Physics Symposium, 1991, 29th Annual Proceedings., International
Conference_Location :
Las Vegas, NV, USA
Print_ISBN :
0-87942-680-2
Type :
conf
DOI :
10.1109/RELPHY.1991.145993
Filename :
145993
Link To Document :
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