• DocumentCode
    3462157
  • Title

    Investigation of structures using GaN/sub x/P/sub 1-x/ active layer

  • Author

    Petomai, L.

  • Author_Institution
    Department of Microelectronics, Slovak UniversiQ of Technology, Ilkovicova 3, 812 I9 Bratislava, Slovak Republic
  • fYear
    2004
  • fDate
    8-10 Sept. 2004
  • Firstpage
    35
  • Lastpage
    36
  • Abstract
    GaNxP1-x/GaP beterostructure with GaNP layer containing Merent N content in range from 0.67 to 2.3% prepared by MOVPE were investigated. The N concentration in GaNP alloy was determined by X-Ray measurement and bandgap energy for different N concentration by employing photocurrent measurement. Visible electro-luminescence emission at room temperature peak intensity in range from 608 nm to 630 nm was observed.
  • Keywords
    Energy measurement; Gallium nitride; Light emitting diodes; Nitrogen; Ocean temperature; Photoconductivity; Photonic band gap; Sea measurements; Semiconductor device measurement; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photonics and Microsystems, 2004. Proceedings of 2004 International Students and Young Scientists workshop
  • Conference_Location
    Acapulco, Mexico
  • Print_ISBN
    0-7803-8598-5
  • Type

    conf

  • DOI
    10.1109/STYSW.2004.1459934
  • Filename
    1459934
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3462157