DocumentCode :
3462157
Title :
Investigation of structures using GaN/sub x/P/sub 1-x/ active layer
Author :
Petomai, L.
Author_Institution :
Department of Microelectronics, Slovak UniversiQ of Technology, Ilkovicova 3, 812 I9 Bratislava, Slovak Republic
fYear :
2004
fDate :
8-10 Sept. 2004
Firstpage :
35
Lastpage :
36
Abstract :
GaNxP1-x/GaP beterostructure with GaNP layer containing Merent N content in range from 0.67 to 2.3% prepared by MOVPE were investigated. The N concentration in GaNP alloy was determined by X-Ray measurement and bandgap energy for different N concentration by employing photocurrent measurement. Visible electro-luminescence emission at room temperature peak intensity in range from 608 nm to 630 nm was observed.
Keywords :
Energy measurement; Gallium nitride; Light emitting diodes; Nitrogen; Ocean temperature; Photoconductivity; Photonic band gap; Sea measurements; Semiconductor device measurement; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photonics and Microsystems, 2004. Proceedings of 2004 International Students and Young Scientists workshop
Conference_Location :
Acapulco, Mexico
Print_ISBN :
0-7803-8598-5
Type :
conf
DOI :
10.1109/STYSW.2004.1459934
Filename :
1459934
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3462157
بازگشت