DocumentCode
3462158
Title
Nanoscale patterned sapphire substrates with cortexlike nanostructures for GaN-based LEDs
Author
Yu-Sheng Lin ; Yeh, J. Andrew
Author_Institution
Inst. of NanoEngineering & Microsyst., Nat. Tsing Hua Univ., Hsinchu, Taiwan
fYear
2011
fDate
8-11 Aug. 2011
Firstpage
63
Lastpage
64
Abstract
A new morphology of nanopatterned sapphire substrates (NPSS) was presented, which applied in LEDs exhibited an output power of 33.1 mW, higher than that on flat substrates 2.4-fold, owing to void-embedded NPSS with cortexlike nanostructures.
Keywords
III-V semiconductors; gallium compounds; light emitting diodes; nanopatterning; nanostructured materials; sapphire; wide band gap semiconductors; GaN; cortexlike nanostructures; light emitting diodes; nanopatterned sapphire substrates; power 33.1 mW; void-embedded NPSS; Gallium nitride; Light emitting diodes; Morphology; Nanoscale devices; Nanostructures; Power generation; Substrates; GaN; LED; naturnal lithography; patterned sapphire;
fLanguage
English
Publisher
ieee
Conference_Titel
Optical MEMS and Nanophotonics (OMN), 2011 International Conference on
Conference_Location
Istanbul
ISSN
2160-5033
Print_ISBN
978-1-4577-0334-8
Type
conf
DOI
10.1109/OMEMS.2011.6031092
Filename
6031092
Link To Document