DocumentCode
3462271
Title
Nanoelectronics: towards end of scaling and beyond
Author
Yu, Bin
Author_Institution
UARC, California Univ., Mountain View , CA
fYear
2006
fDate
23-26 Oct. 2006
Firstpage
19
Lastpage
22
Abstract
Future trends are discussed of the semiconductor mainstream technology in the next 1 1/2-decade towards the "scaling end" of the ITRS Roadmap and beyond. While the physics, design, and manufacturing limitations of CMOS scaling will be indisputably strike in the foreseeable future, emerging nanotechnology may step in to promote continued advancement of chip technology in terms of performance, density, and cost, not through the well-established geometry scaling-down approach but based on ingenious concepts of new functional materials, device architectures, and large-scale fabrication
Keywords
CMOS integrated circuits; large scale integration; nanoelectronics; CMOS scaling; ITRS Roadmap; large-scale fabrication; nanoelectronics; nanotechnology; scaling end; semiconductor mainstream technology; CMOS technology; FETs; III-V semiconductor materials; MOSFETs; Manufacturing industries; Nanoelectronics; Nanotechnology; Semiconductor device manufacture; Silicon; Thin film transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location
Shanghai
Print_ISBN
1-4244-0160-7
Electronic_ISBN
1-4244-0161-5
Type
conf
DOI
10.1109/ICSICT.2006.306045
Filename
4098010
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