• DocumentCode
    3462271
  • Title

    Nanoelectronics: towards end of scaling and beyond

  • Author

    Yu, Bin

  • Author_Institution
    UARC, California Univ., Mountain View , CA
  • fYear
    2006
  • fDate
    23-26 Oct. 2006
  • Firstpage
    19
  • Lastpage
    22
  • Abstract
    Future trends are discussed of the semiconductor mainstream technology in the next 1 1/2-decade towards the "scaling end" of the ITRS Roadmap and beyond. While the physics, design, and manufacturing limitations of CMOS scaling will be indisputably strike in the foreseeable future, emerging nanotechnology may step in to promote continued advancement of chip technology in terms of performance, density, and cost, not through the well-established geometry scaling-down approach but based on ingenious concepts of new functional materials, device architectures, and large-scale fabrication
  • Keywords
    CMOS integrated circuits; large scale integration; nanoelectronics; CMOS scaling; ITRS Roadmap; large-scale fabrication; nanoelectronics; nanotechnology; scaling end; semiconductor mainstream technology; CMOS technology; FETs; III-V semiconductor materials; MOSFETs; Manufacturing industries; Nanoelectronics; Nanotechnology; Semiconductor device manufacture; Silicon; Thin film transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
  • Conference_Location
    Shanghai
  • Print_ISBN
    1-4244-0160-7
  • Electronic_ISBN
    1-4244-0161-5
  • Type

    conf

  • DOI
    10.1109/ICSICT.2006.306045
  • Filename
    4098010