DocumentCode :
3462271
Title :
Nanoelectronics: towards end of scaling and beyond
Author :
Yu, Bin
Author_Institution :
UARC, California Univ., Mountain View , CA
fYear :
2006
fDate :
23-26 Oct. 2006
Firstpage :
19
Lastpage :
22
Abstract :
Future trends are discussed of the semiconductor mainstream technology in the next 1 1/2-decade towards the "scaling end" of the ITRS Roadmap and beyond. While the physics, design, and manufacturing limitations of CMOS scaling will be indisputably strike in the foreseeable future, emerging nanotechnology may step in to promote continued advancement of chip technology in terms of performance, density, and cost, not through the well-established geometry scaling-down approach but based on ingenious concepts of new functional materials, device architectures, and large-scale fabrication
Keywords :
CMOS integrated circuits; large scale integration; nanoelectronics; CMOS scaling; ITRS Roadmap; large-scale fabrication; nanoelectronics; nanotechnology; scaling end; semiconductor mainstream technology; CMOS technology; FETs; III-V semiconductor materials; MOSFETs; Manufacturing industries; Nanoelectronics; Nanotechnology; Semiconductor device manufacture; Silicon; Thin film transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0160-7
Electronic_ISBN :
1-4244-0161-5
Type :
conf
DOI :
10.1109/ICSICT.2006.306045
Filename :
4098010
Link To Document :
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