DocumentCode
3462297
Title
Critical technology issues for deca-nanometer MOSFETs
Author
Östling, Mikael ; Malm, B. Gunnar ; von Haartman, M. ; Hållstedt, Julius ; Hellström, Per-Erik ; Zhang, Shili
Author_Institution
Sch. of Inf. Technol., R. Inst. of Technol., Kista
fYear
2006
fDate
23-26 Oct. 2006
Firstpage
27
Lastpage
30
Abstract
An overview of critical integration issues for future generation MOSFETs towards 10 nm gate length is presented. Novel materials and innovative structures are discussed. The need for high-K gate dielectrics and a metal gate electrode is discussed. Different techniques for strain-enhanced mobility are discussed
Keywords
MOSFET; dielectric materials; electrodes; 10 nm; critical technology issues; decananometer MOSFET; future generation MOSFET; high-K gate dielectrics; metal gate electrode; strain-enhanced mobility; Contact resistance; Dielectric materials; Electronic mail; FinFETs; Immune system; Information technology; MOSFETs; Silicides; Silicon; Stress;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location
Shanghai
Print_ISBN
1-4244-0160-7
Electronic_ISBN
1-4244-0161-5
Type
conf
DOI
10.1109/ICSICT.2006.306047
Filename
4098012
Link To Document