Title :
Critical technology issues for deca-nanometer MOSFETs
Author :
Östling, Mikael ; Malm, B. Gunnar ; von Haartman, M. ; Hållstedt, Julius ; Hellström, Per-Erik ; Zhang, Shili
Author_Institution :
Sch. of Inf. Technol., R. Inst. of Technol., Kista
Abstract :
An overview of critical integration issues for future generation MOSFETs towards 10 nm gate length is presented. Novel materials and innovative structures are discussed. The need for high-K gate dielectrics and a metal gate electrode is discussed. Different techniques for strain-enhanced mobility are discussed
Keywords :
MOSFET; dielectric materials; electrodes; 10 nm; critical technology issues; decananometer MOSFET; future generation MOSFET; high-K gate dielectrics; metal gate electrode; strain-enhanced mobility; Contact resistance; Dielectric materials; Electronic mail; FinFETs; Immune system; Information technology; MOSFETs; Silicides; Silicon; Stress;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0160-7
Electronic_ISBN :
1-4244-0161-5
DOI :
10.1109/ICSICT.2006.306047
