Title :
The techniques of the serial and paralleled IGBTs
Author :
Chen, Jiann-Fuh ; Lin, Jiunn-Nan ; Ai, Tsu-Hua
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
Abstract :
To extend the rating ranges of current and voltage of IGBT, the serial and parallel methods are presented in this paper. For serial techniques, it is found that the voltage sharing can be made to balance by adding an RCD snubber and an adequate balancing resistor in each IGBT in series. For the parallel method, a parallel scheme using a current feedback method is proposed in this paper. The above serial and parallel techniques prove that the currents of paralleled IGBTs and the voltages of IGBTs in series can be balanced by experiments
Keywords :
feedback; insulated gate bipolar transistors; residual current devices; resistors; snubbers; RCD snubber; balancing resistor; current feedback method; current rating; paralleled IGBT; serial IGBT; voltage rating; voltage sharing; Capacitors; Costs; Current density; Frequency; Insulated gate bipolar transistors; MOSFETs; Power electronics; Resistors; Snubbers; Voltage;
Conference_Titel :
Industrial Electronics, Control, and Instrumentation, 1996., Proceedings of the 1996 IEEE IECON 22nd International Conference on
Conference_Location :
Taipei
Print_ISBN :
0-7803-2775-6
DOI :
10.1109/IECON.1996.566015
