Title :
Experimental evidence of short-channel electron mobility degradation caused by interface charges located at the gate-edge of triple-gate FinFETs
Author :
Ramos, J. ; Augendre, E. ; Kottantharayil, A. ; Mercha, A. ; Simoen, E. ; Rosmeulen, M. ; Severi, S. ; Kerner, C. ; Chiarella, T. ; Nackaerts, A. ; Ferain, I. ; Hoffmann, T. ; Jurczak, M. ; Biesemans, S.
Author_Institution :
Silicon Process & Device Technol. Div., IMEC, Leuven
Abstract :
The mechanism responsible for the short-channel electron mobility (e$mobility) abnormal degradation in n-type tall fins multiple-gate field-effect transistors (MuGFETs) has been identified. RF-CV measurement, mobility extraction, and 1/f noise measurements have been performed and point to a larger process related density of traps (N t) at the gate edges. These traps and their distribution along the channel give a common and consistent explanation for the channel dependence of the mobility and the normalized noise degradation and for the threshold voltage roll off
Keywords :
1/f noise; MOSFET; electron mobility; 1/f noise measurements; RF-CV measurement; interface charges; mobility extraction; multiple-gate field-effect transistors; short-channel electron mobility degradation; threshold voltage; triple-gate FinFET; Capacitance; Capacitance-voltage characteristics; Degradation; Electron mobility; Electron traps; FinFETs; Implants; Noise measurement; Performance evaluation; Radio frequency;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0160-7
Electronic_ISBN :
1-4244-0161-5
DOI :
10.1109/ICSICT.2006.306080
