The PDSOI accumulation-mode dynamic threshold pMOS with reversed Schottky barrier

Author

Bi, Jin-Shun ; Hai, Chao-He

Author_Institution

Inst. of Microelectron., Chinese Acad. & Sci., Beijing

fYear

2006

fDate

23-26 Oct. 2006

Firstpage

75

Lastpage

77

Abstract

For the first time, partially-depleted silicon-on-insulator (PDSOI) accumulation-mode dynamic threshold (AMDT) pMOS with TiSi₂/n-Si as reverse Schottky barrier (RSB) is reported. By this RSB scheme, AMDT pMOS can be operated beyond 0.7 V, which is the drawback of conventional DT pMOS with gate and body connected (GBC). Compared with normal AM pMOS, AMDT pMOS with RSB reduces threshold voltage by 360 mV and shows excellent subthreshold slope, higher drivability and improved off-state breakdown characteristics

Keywords

MOSFET; Schottky barriers; semiconductor device breakdown; silicon-on-insulator; 360 mV; PDSOI; accumulation-mode dynamic threshold; off-state breakdown characteristics; pMOS; partially-depleted silicon-on-insulator; reversed Schottky barrier; threshold voltage; Bismuth; Breakdown voltage; Chaos; Conductivity; MOS devices; MOSFETs; Microelectronics; Power supplies; Schottky barriers; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on

Conference_Location

Shanghai

Print_ISBN

1-4244-0160-7

Electronic_ISBN

1-4244-0161-5

Type

conf

DOI

10.1109/ICSICT.2006.306081

Filename

4098025