Title :
A comparison of inverter-type circuit lifetime and quasi-static analysis of NMOSFET lifetime
Author :
Rakkhit, Rajat ; Yue, John T.
Author_Institution :
Advanced Micro Devices, Sunnyvale, CA, USA
Abstract :
Performance degradation of inverter-type circuit due to hot carrier injection is investigated. Frequency degradation of the ring oscillators was used as a monitor of the circuit performance for very short gate delay transients. A quasi-static approach was used to correlate the circuit performance with various parameter degradations of discrete NMOSFETs. It is shown that the degradation behavior of the circuit with time is quite different from that of a discrete device. The quasi-static calculations underestimate the degradation in CMOS inverter propagation delay and overestimate the predicted lifetime. The results indicate that created electron traps may be the cause for enhanced degradation.<>
Keywords :
CMOS integrated circuits; electron traps; hot carriers; insulated gate field effect transistors; invertors; CMOS inverter propagation delay; NMOSFET lifetime; electron traps; gate delay transients; hot carrier injection; inverter-type circuit lifetime; parameter degradations; quasi-static analysis; quasi-static calculations; ring oscillators; Circuit optimization; Degradation; Electron traps; Frequency; Hot carrier injection; Inverters; MOSFETs; Monitoring; Propagation delay; Ring oscillators;
Conference_Titel :
Reliability Physics Symposium, 1991, 29th Annual Proceedings., International
Conference_Location :
Las Vegas, NV, USA
Print_ISBN :
0-87942-680-2
DOI :
10.1109/RELPHY.1991.145996
