Uniaxial strain relaxation on ultra-thin strained-Si directly on insulator (SSDOI) substrates

Author

Yin, Haizhou ; Ren, Z. ; Saenger, K.L. ; Hovel, H.J. ; de Souza, J.P. ; Ott, J.A. ; Zhang, R. ; Bedell, S.W. ; Pfeiffer, G. ; Bendernagel, R. ; Chan, V. ; Sadana, D.K. ; Sung, C.Y. ; Khare, M. ; Ieong, M. ; Shahidi, G.

Author_Institution

IBM SRDC, Hopewell Junction, NY

fYear

2006

fDate

Oct. 2006

Firstpage

136

Lastpage

138

Abstract

Uniaxial strain relaxation of ultra-thin biaxial-tensile SSDOI is realized by ion-implant amorphization and solid phase epitaxy (II/SPE). The selective full amorphization in the thin SSDOI region, between raised source/drain (RSD) and channel, induces uniaxial strain relaxation in the channel. The SSDOI uniaxial strain relaxation enhances PFETs drive current by more than 20%

Keywords

amorphisation; field effect transistors; ion implantation; semiconductor technology; silicon-on-insulator; solid phase epitaxial growth; stress relaxation; substrates; SSDOI substrates; biaxial-tensile SSDOI; drive current; ion-implant amorphization; selective full amorphization; solid phase epitaxy; ultra-thin strained-silicon directly on insulator; uniaxial strain relaxation; Annealing; Capacitive sensors; Degradation; Epitaxial growth; Implants; Insulation; Solids; Stress; Tensile strain; Uniaxial strain;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on

Conference_Location

Shanghai

Print_ISBN

1-4244-0160-7

Electronic_ISBN

1-4244-0161-5

Type

conf

DOI

10.1109/ICSICT.2006.306119

Filename

4098041