Title :
A comprehensive semi-empirical mobility model for strained-Si N-MOSFETs
Author :
Raghavan, Nagarajan ; Hwang, Nam ; Tan, Cher Ming
Author_Institution :
Nanyang Technol. Univ., Singapore
Abstract :
A mobility model is developed for strained-Si N-MOSFETs accounting for the various mechanisms such as surface roughness scattering, optical phonon scattering and coulomb scattering that cause degradation in effective carrier mobility. The proposed semi-empirical model is in good agreement with experimental data for a wide range of temperatures, doping densities and Ge mole-fractions
Keywords :
MOSFET; carrier mobility; light scattering; semiconductor device models; silicon; surface roughness; surface scattering; Si; carrier mobility degradation; coulomb scattering; optical phonon scattering; semi-empirical mobility model; strained-silicon N-MOSFETs; surface roughness scattering; Charge carriers; Degradation; MOSFET circuits; Optical scattering; Phonons; Rough surfaces; Semiconductor process modeling; Strontium; Surface roughness; Temperature;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0160-7
Electronic_ISBN :
1-4244-0161-5
DOI :
10.1109/ICSICT.2006.306120
